| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride-based compound semiconductor light-emitting device in which the adhesion between a conductive substrate and an ohmic electrode is improved to make the device highly reliable, and to provide a method of manufacturing the same. <P>SOLUTION: The nitride-based compound semiconductor light-emitting device includes a supporting substrate, a first ohmic electrode formed on the supporting substrate, a bonding metal layer formed on the first ohmic electrode, a second ohmic electrode formed on the bonding metal layer, a nitride-based compound semiconductor layer formed on the second ohmic electrode, a transparent electrode formed on almost all of the upper surface of the semiconductor layer, and an ohmic electrode formed on the back side surface of the supporting substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
