发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent atoms and molecules to be discharged from a wafer stored inside from being re-attached to the wafer in a closed wafer storage container such as an FOUP. SOLUTION: A p-doped polycrystalline silicon film is deposited on a wafer, the wafer is stored in an FOUPcuc, the FOUPcuc is closed and carried to a bay station BS, and the FOUPcuc is stored in the bay station BS. While the FOUPcuc is stored in the bay station BS, pipes PP are respectively attached to breezing filters formed at the two parts of the bottom face of the FOUPcuc, dry gas is made to flow from one pipe PP to the FOUPcuc, and atmosphere in the FOUPcuc is exhausted from the other pipe PP so that atmosphere in the FOUPcuc is ventilated. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006049683(A) 申请公布日期 2006.02.16
申请号 JP20040230579 申请日期 2004.08.06
申请人 RENESAS TECHNOLOGY CORP 发明人 TOKUNAGA KENJI;KOIWA AKIRA;SUZUKI NORIO;CHAGIHARA HIROSHI;YOSHIDA YASUKO;SAEKI KEIICHI
分类号 H01L21/677;H01L21/02 主分类号 H01L21/677
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