MOSGATED POWER SEMICONDUCTOR DEVICE WITH SOURCE FIELD ELECTRODE
摘要
A power semiconductor device which includes a source field electrode (30), and at least one insulated gate electrode (24, 26) adjacent a respective side of the source field electrode (30), the source field electrode (30) and the gate electrode being disposed in a common trench (10), and a method for fabricating the device.
申请公布号
WO2006004746(A3)
申请公布日期
2006.02.16
申请号
WO2005US22917
申请日期
2005.06.27
申请人
INTERNATIONAL RECTIFIER CORPORATION;CAO, JIANJUN;KENT, DAVE;HARVEY, PAUL;SODHI, RITU;KINZER, DANIEL, M.;THAPAR, NARESH;SAWLE, ANDREW, N.
发明人
CAO, JIANJUN;KENT, DAVE;HARVEY, PAUL;SODHI, RITU;KINZER, DANIEL, M.;THAPAR, NARESH;SAWLE, ANDREW, N.
