发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING SEMICONDUCTOR SUBSTRATE CLEANING COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by using a semiconductor substrate cleaning composition, which can minimize damage to a metal layer while enhancing the impurity removal ability. SOLUTION: In the method of manufacturing the semiconductor device, a metal-containing pattern structure is formed on a semiconductor substrate, and a semiconductor substrate cleaning composition is applied to the semiconductor substrate. The semiconductor substrate cleaning composition includes 78 percent by mass to 99.98 percent by mass of an acid aqueous solution and 0.01 percent by mass to 11 percent by mass of a first chelating agent. Application of the semiconductor substrate cleaning composition forms a first corrosion inhibition film on a first surface portion which is not covered with the impurities of the pattern structure, and removes the impurities from a second surface portion which is covered with the impurities of the pattern structure. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006049881(A) 申请公布日期 2006.02.16
申请号 JP20050204826 申请日期 2005.07.13
申请人 SAMSUNG ELECTRONICS CO LTD;TECHNO SEMICHEM CO LTD 发明人 LEE KYUNG-JIN;AHN SEUNG-HYUN;CHOI BAIK-SOON;BAEK KUI-JONG;HAN WOONG
分类号 H01L21/3213;H01L21/28;H01L21/304;H01L21/768 主分类号 H01L21/3213
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