| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to form the extension region of a shallow source-drain by segregating indium in the direction of a semiconductor substrate interface. SOLUTION: The manufacturing method of a semiconductor device comprises a step of forming extension regions 15, 16 of a source-drain on semiconductor substrates 11 at both sides of a gate electrode 14 through a gate insulating film 13. The step of forming the extension regions 15, 16 of the source-drain comprises the steps of implanting indium in the semiconductor substrates 11 at both sides of the gate electrode 14, and forming an oxide film 19 on surfaces of the semiconductor substrates 11 to move a part of indium implanted in the semiconductor substrates 11 to the oxide film 19 side. COPYRIGHT: (C)2006,JPO&NCIPI
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