| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoresist protective film applicable for a liquid immersion lithographic process, to provide a composition for a photoresist protective film for forming the protective film, and to provide a method for forming a photoresist pattern using the photoresist protective film. <P>SOLUTION: The composition for a photoresist protective film comprises: a fluorine-containing polymer having one kind or more of functional groups selected from a group consisting of -COOH, -SO<SB>3</SB>H, -OP(=O)(OH)<SB>2</SB>, -NR<SB>2</SB>and -N<SP>+</SP>R<SB>3</SB>Cl<SP>-</SP>, wherein R represents a 1-4C alkyl group, and having 1,000 to 100,000 weight average molecular weight M<SB>w</SB>; and a solvent (water, alcohol or a fluorine-containing solvent). <P>COPYRIGHT: (C)2006,JPO&NCIPI |
