| 摘要 |
PROBLEM TO BE SOLVED: To solve a conventional problem of occurrence of a junction leak current between a collector and a base due to crystal defect of a slot end adjoining a base region. SOLUTION: An opening 17 is so formed on a silicon oxide film 15 and a TEOS film 16 as to allow separation distance t1 from an upper end part 18 of a slot part 8. The opening 17 is utilized to form a base taking-out electrode 21. An external base region 19 is formed from the base taking-out electrode 21 by solid-phase diffusion. Here, a separation distance t2 is allowed between the external base region 19 and the upper end 18 of the slot part 8. By this manufacturing method, occurrence of junction leak current between a collector and a base is suppressed. COPYRIGHT: (C)2006,JPO&NCIPI
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