| 摘要 |
PROBLEM TO BE SOLVED: To provide at a low price a semiconductor device having a formed highly accurate analog IC wherein complete-depletion type high-speed MOS transistors and high withstanding voltage MOS transistors are mounted in a mixed way on an SOI substrate. SOLUTION: In the semiconductor device, bleeder resistances are formed in its monocrystal-silicon-device forming layer present above an SOI substrate. On the top surfaces of the respective bleeder resistances, resistance-value fixing electrodes are so formed out of the gate insulating films and the gate electrodes of high-speed MOS transistors as to make their potentials equal to the ones of the bleeder resistances positioned thereunder. COPYRIGHT: (C)2006,JPO&NCIPI
|
