| 摘要 |
PROBLEM TO BE SOLVED: To reduce an area of an integrated circuit having a MIM capacity element, miniaturize a chip size and lower a chip cost. SOLUTION: A silicon substrate is provided with a first MIM capacity composed of a first metal film 301, a first insulating film 401, and a first electrode 501; and a second MIM capacity composed of a second metal film 302, a second insulating film 402, and a second electrode 502. The first electrode 501 is connected to the second metal film 302 by a tungsten plug 601, and the second electrode 502 is connected to the third metal film 303 by a tungsten plug 602. A wiring for connecting elements shares the respective metal films 301, 302; and positions of the first MIM capacity and the second MIM capacity are arranged at the same location. These MIM capacities are connected in parallel, thereby forming a semiconductor device having a structure in which a capacity density is increased without increasing a chip area. COPYRIGHT: (C)2006,JPO&NCIPI
|
