| 摘要 |
PROBLEM TO BE SOLVED: To suppress sensitivity temperature characteristics of a semiconductor pressure sensor to the utmost. SOLUTION: The pressure sensor for outputting a pressure sensing value corresponding to pressure applied on a diaphragm 12 on the basis of resistance value change of a gage resistor 13 comprises a semiconductor substrate 10 for forming the pressure sensing diaphragm 12, a pedestal 15 comprising glass joining the semiconductor substrate 10, and the gage resistor 13 changing a resistance value on the basis of piezo resistive effect accompanying strain of the diaphragm 12. The pressure sensor regulates: first change of a pressure sensing value caused by change of the resistance value of the gage resistor 13 due to temperature change and change of a resistance value change rate of the gage resistor 13 on the basis of the piezo resistive effect due to the temperature change; and second change of the pressure sensing value by regulating thickness and a thermal expansion coefficient of the pedestal 15 so that a difference with the second change of the pressure sensing value caused by thermal strain generated between the semiconductor substrate 10 and the pedestal 15 due to the temperature change is small. COPYRIGHT: (C)2006,JPO&NCIPI
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