| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a thin-film transistor display panel, capable of simplifying the manufacturing process of the thin-film transistor display panel and capable of preventing the disconnection of pixel electrodes. <P>SOLUTION: The manufacturing method of the thin-film transistor display panel comprises a step of forming gate lines on a substrate, a step of forming gate insulating films on the gate lines, a step of forming semiconductor layers on the gate insulating films, a step of forming ohmic contact members on the semiconductor layers, a step of forming data lines and drain electrodes on the ohmic contact members, a step of depositing protective films on the data lines and drain electrodes, a step of forming first photosensitive films on the protective films, a step of exposing at least a part of the drain electrodes and at least a part of the substrate by etching the gate insulating films and protective films with the first photosensitive films as the masks, a step of depositing conductive films, and a step of removing the first photosensitive films to form the pixel electrodes on portions to which the drain electrodes are exposed. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
