| 摘要 |
PROBLEM TO BE SOLVED: To perform write-in/read-out by a compact common circuit by using a resistance variation element as a storage element. SOLUTION: A semiconductor memory is provided with: an input node 1 and an output node 2; a first MIS transistor P1 in which a drain electrode of a side from which a first conduction type carrier is made to flow out is connected to an output node 2, a source electrode to which a first conduction type carrier is made to flow is connected to a first high potential side power source V<SB>DD</SB>, to connect a control electrode to the input node 1 and making the first conduction type carrier as a main current; a second MIS transistor N1 in which a drain electrode of a side from which a second conduction type carrier is made to flow out is connected to the output node 2, a source electrode to which a second conduction type carrier is made to flow is connected to a second low potential side power source V<SB>SS</SB>, to connect the control electrode to the input node 1 and making the second conduction type carrier as a main current; and a resistance variation element R<SB>V</SB>1 connected between the input node 1 and the output node 2 and varying a resistance value depending on a direction of applied voltage. COPYRIGHT: (C)2006,JPO&NCIPI |
