| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent deterioration in a photoelectric conversion layer, and specifically, to enable imaging including a high-luminance spot light, in an imaging device having a high-sensitivity photoelectric conversion layer. <P>SOLUTION: The imaging device has a photoelectric conversion film, having at least an amorphous semiconductor layer containing Se as the main material and having an avalanche multiplication function, and an amorphous photoelectric conversion layer, containing Se and Te and having a function of absorbing most of an incident light, to enable converting the light into electric charges; a first barrier layer formed on the first surface of the photoelectric conversion film; a translucent electrode formed on the first barrier layer; a second barrier layer formed on a second surface of the photoelectric conversion film; and an electric charge reading means, provided on the second surface side of the photoelectric conversion film and reading signal electric charges to be generated in the photoelectric conversion film. The imaging device has a temperature control means for controlling the temperature of the photoelectric conversion film at a temperature that is not lower than the glass transfer temperature of the amorphous photoelectric conversion layer and not higher than a glass transfer temperature plus 30°C of the amorphous semiconductor layer, and a voltage-applying means for applying a voltage via the translucent photoelectric conversion layer so that the electric field of the photoelectric conversion layer is 0.8×10<SP>8</SP>-1.1×10<SP>8</SP>V/m. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
