发明名称 GAS NOZZLE STRUCTURE AND SEMICONDUCTOR MANUFACTURING APPARATUS WITH IT
摘要 A gas nozzle structure and a semiconductor manufacturing apparatus including the same are provided to arrange a plurality of injection holes at a gas ring by coupling a chamber lid and the gas ring with each other. A first body is connected to a gas supply source. A first gas buffer(104) and a plurality of gas paths(106) are formed in the inside of the first body. The first gas buffer shares gas supplied from a gas supply source. The gas paths are connected to the first gas buffer. A second body is coupled with the first body in order to be connected with the gas paths. The second body includes a plurality of injection holes(112) to inject the gas into the chamber. The injection holes are connected to the gas paths through a second gas buffer(114) formed between the first and second bodies.
申请公布号 KR20080067061(A) 申请公布日期 2008.07.18
申请号 KR20070004169 申请日期 2007.01.15
申请人 SEMES CO., LTD. 发明人 JUNG, SOON BIN
分类号 H01L21/02;H01L21/205 主分类号 H01L21/02
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