| 摘要 |
A method for forming a capacitor of a semiconductor device is provided to minimize generation of abnormal oxide by performing an HF cleaning process, a rinse process and a dry process on a hemi-spherical silicon layer of a capacitor by an in-situ method while using FRD(fluorin rinse dry) equipment. A substrate(324) having a storage electrode is cleaned by using FRD equipment for continuously performing an HF cleaning process, a rinse process and a dry process. N2 gas(334) is introduced to pre-heat the substrate having the cleaned storage electrode. A hemi-spherical silicon layer is grown on the surface of the storage electrode of the pre-heated substrate according to an MPS(metal stable polysilicon) process. In the dry process using the FRD equipment, N2 gas is introduced to avoid absorption of particles. The hemi-spherical silicon layer has a thickness of 550-650 Å.
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