发明名称 |
GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF PRODUCING THE SAME |
摘要 |
<p>The present invention provides a gallium nitride based semiconductor light emitting diode having high transparency, and at the same time, capable of improving contact resistance between a p-type GaN layer and electrode and a process for preparing the same. These objects can be accomplished by forming, on an upper part of a upper clad layer made of p-GaN, an ohmic contact forming layer using MIO, ZIO and CIO (In<SUB>2</SUB>O<SUB>3 </SUB>including one of Mg, Zn and Cu), and then a transparent electrode layer and a second electrode with ITO thereon, so as to improve contact resistance between the upper clad layer and the second electrode while providing high transparency.</p> |
申请公布号 |
KR20060014106(A) |
申请公布日期 |
2006.02.15 |
申请号 |
KR20040062686 |
申请日期 |
2004.08.10 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
CHAE, SEUNG WAN;KWAK, JUN SUB;SHIN, HYOUN SOO;SEO, JUN HO |
分类号 |
H01L33/06;G02F1/13357;H01L21/205;H01L33/10;H01L33/32;H01L33/38;H01L33/42 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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