| 摘要 |
PROBLEM TO BE SOLVED: To provide a high luminance with less power consumption by forming a light-emitting layer to be held between P-type and N-type semiconductor layers on a substrate, and sequentially forming a first conductive layer, a substantially transparent second conductive layer and an electrode layer on the semiconductor layer. SOLUTION: In this blue-color LED device, a P-type GaN layer (P-type semiconductor layer) 3 and an N-type GaN layer (N-type semiconductor layer) 4 are formed via a buffer layer 2 made of GaN on a substrate 1 made of sapphire. Then, an InGaN layer A (light-emitting layer) 5 is formed between the P-type GaN layer 3 and the N-type GaN layer 4. In addition, a translucent NiAu layer (first conductive layer) 6 made of a Ni-Au alloy is formed on the P-type GaN layer 3, and a substantially transparent ITO layer (second conductive layer) 7 is formed on the NiAu layer 6. An anode electrode layer (electrode layer) 8, circular in a plan view, made of Al is formed at a substantially center portion on the ITO layer 7. |
