| 摘要 |
<p>A method for manufacturing a fine pattern of a semiconductor device is provided to increase integrity of the semiconductor device by etching the layer using a hard mask film pattern as an etching barrier and removing a sacrificial film pattern. A plurality of sacrificial film patterns are formed on a layer(12). The width of the sacrificial film pattern is reduced by the trimming. A hard mask film pattern(20) is formed in both sides of the sacrificial film pattern. The sacrificial film pattern(14B) is removed. The fine pattern is formed by etching the layer and a nitride film pattern(13) using the hard mask film pattern as an etching barrier. The sacrificial film pattern is formed by the anisotropic etching.</p> |
