| 发明名称 |
Cleaning method, method for fabricating semiconductor device and cleaning solution |
| 摘要 |
A cleaning solution having an oxidation-reduction potential lower than that of pure water and a pH value of 4 or below is used to remove metal contamination, thereby efficiently removing the metal contamination adhered onto a surface of a substrate without damaging an underlayer.
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| 申请公布号 |
US6998352(B2) |
申请公布日期 |
2006.02.14 |
| 申请号 |
US20020284191 |
申请日期 |
2002.10.31 |
| 申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
AOKI HIDEMITSU;TOMIMORI HIROAKI;YAMAMOTO KENICHI |
| 分类号 |
G03F7/40;H01L21/302;C11D7/02;C11D7/26;C11D7/32;C11D11/00;C11D17/08;G03F7/42;H01L21/02;H01L21/027;H01L21/304;H01L21/311;H01L21/321;H01L21/768 |
主分类号 |
G03F7/40 |
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