| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus capable of attaining potential stability and image quality in a well region in a pixel region. SOLUTION: A p-type well region as an element forming layer is formed in an n-type silicon substrate and a photodiode and various MOS transistors are provided therein. Further, a silicide cover film is provided to an upper side of the n-type silicon substrate, an opening corresponding to a well contact region located at the side of the photodiode is provided to part of the silicide cover film, and a cobalt silicide film is formed on the well contact region through the opening. Then a contact hole corresponding to the cobalt silicide film is formed in an inter-layer isolation film located to the upper layer, and a p well contact plug is arranged therein and connected to a power wire in the inter-layer isolation film. COPYRIGHT: (C)2006,JPO&NCIPI
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