| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon wafer which has a DZ layer with extremely few crystal defects and excels in strength characteristics, and also to provide its manufacturing method. SOLUTION: An oxygen deposition nucleus formation process is carried out to form oxygen deposition nuclei in high concentration in the BMD layer 34 of a wafer material 33 after going through IG. In the oxygen deposition nucleus formation process, heat treatment with rapid heating up and down is conducted on the wafer material (silicon wafer) 33 after IG. By conducting the heat treatment with rapid heating up and down, oxygen deposition nuclei having a size of 20 nm or less are formed in high concentration of 1×10<SP>10</SP>atms/cm<SP>3</SP>or above in the BMD layer 34 and thereby a BMD layer 37 containing the oxygen deposition nuclei in high concentration is formed. Thus, by conducting the oxygen deposition nucleus formation process, such a silicon wafer 38 can be obtained that has the DZ layer 35 covering the surface and contains in an inner part the BMD layer 37 containing the oxygen deposition nuclei in high concentration. COPYRIGHT: (C)2006,JPO&NCIPI
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