发明名称 |
Metal interconnect features with a doping gradient |
摘要 |
A metal filled damascene structure with improved electromigration resistance and method for forming the same, the method including providing a semiconductor process wafer comprising damascene openings; and, depositing metal and at least one metal dopant according to an ECD process to from a metal filled damascene comprising a doped metal alloy portion.
|
申请公布号 |
US2006027460(A1) |
申请公布日期 |
2006.02.09 |
申请号 |
US20040913759 |
申请日期 |
2004.08.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHANG CHUNG L.;TSAI MING H.;SHUE WINSTON S. |
分类号 |
C25D5/18;C25D7/12 |
主分类号 |
C25D5/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|