| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a high-performance thin-film semiconductor device exhibiting sufficiently high carrier mobility by forming a polycrystalline film whose direction is three-dimensionally controlled. SOLUTION: (1) A polycrystalline film is formed on a substrate and (2) ions are implanted into the polycrystalline film from two directions different from each other. In this way, only a crystal grain b whose crystal direction in the direction of ion implantation is a channeling direction is left by three-dimensional control. A crystal lattice in the other crystal direction is broken to form an amorphous region e. (3) The three-dimensionally controlled crystal grain b and the other amorphous film are heat-treated. By crystallizing the three-dimensionally controlled crystal grain b as a seed, a polycrystalline film composed only of the three-dimensionally controlled crystal grain can be formed. COPYRIGHT: (C)2006,JPO&NCIPI
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