发明名称 |
Method of manufacturing a semiconductor device with a strained channel |
摘要 |
A method of manufacturing a semiconductor device provides a semiconductor substrate with a gate and a number of source/drain regions on the semiconductor substrate. A layer containing a strain-inducing element is provided over the number of source/drain regions. The strain-inducing element is driven from the layer containing a strain-inducing element into the number of source/drain regions. A number of source/drains is formed in the number of source/drain regions.
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申请公布号 |
US2006030094(A1) |
申请公布日期 |
2006.02.09 |
申请号 |
US20040016023 |
申请日期 |
2004.12.16 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
CHUI KING J.;SAMUDRA GANESH;YEO YEE C.;LIU JINPING;TEE KHENG C.;PHUA WEE H.;WONG LYDIA |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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