发明名称 |
VOLTAGE RANDOM ACCESS MEMORY (VRAM) |
摘要 |
An integrated circuit memory cell and voltage ladder design that adapts techniques typically applied to Static Random Access Memory (SRAM) circuits to implement a compact array of analog Voltage Random Access Memory (VRAM) locations. The memory cells in the VRAM each store a digital value that controls a corresponding switch. The switch couple a particular voltage from a set of voltages generated by the ladder, to be output when that location is enabled. Multiple analog output voltages are provided by simply providing additional rows of cells.
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申请公布号 |
CA2573147(A1) |
申请公布日期 |
2006.02.09 |
申请号 |
CA20052573147 |
申请日期 |
2005.07.06 |
申请人 |
KENET, INC. |
发明人 |
ANTHONY, MICHAEL P.;KUSHNER, LAWRENCE J. |
分类号 |
H03M1/78;H03M7/00 |
主分类号 |
H03M1/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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