| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the variation in piezoelectric characteristics, within the wafer plane of a piezoelectric thin film. <P>SOLUTION: A piezoelectric thin-film device has a structure such that at least a bottom electrode 2, a piezoelectric thin film 3, and a top electrode 4 are stacked in order on a substrate 1, and the surface of the substrate has a continuous step structure 5, with an average terrace width w being larger than 0.5 nm and smaller than 10 nm. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
