| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a luminous element that the migration of Ag is suppressed in a nitride semiconductor luminous element and light fetch efficiency and luminous efficiency are improved. <P>SOLUTION: The semiconductor luminous element that an active layer is the nitride semiconductor luminous element sandwiched between an n-type conductive semiconductor layer and a p-type conductive semiconductor layer, wherein a p-type electrode 5 comprising an Ag layer connected to the p-type conductive semiconductor layer 4 and other metal layers is of a structure that is surrounded by an insulative protective film 6 and a p pad electrode 7, and an upper area of the p pad electrode 7 is smaller than that of the p electrode 5. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
