| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface acoustic wave device utilizing a longitudinal wave type leaky surface acoustic wave introduced onto its surface by forming a ZnO thin film on a crystal substrate that attains high frequency applications furthermore and realizes excellent characteristics. SOLUTION: In the surface acoustic wave device, an IDT 2 is formed on the crystal substrate 1 of (0,θ, 0) in Euler's angle representation, the ZnO thin film 3 is formed in a way of covering the IDT 2, the longitudinal wave type leaky surface acoustic wave is stimulated on the surface of the substrate, a cut angleθof the crystal substrate 1 is set to a range of 120°≤θ≤140°, and a film thickness H of the ZnO thin film 3 standardized by the wavelengthλof the longitudinal wave type leaky surface acoustic wave is set to a range of H≤0.08λ. COPYRIGHT: (C)2006,JPO&NCIPI
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