| 摘要 |
PROBLEM TO BE SOLVED: To provide the method of manufacturing a solid-state imaging device in which image quality of an output image is improved and a saturation charge amount is increased by preventing formation of a charge transfer unit and a light receiving unit including crystal defects. SOLUTION: A method of manufacturing a solid-state imaging device includes the steps of forming a light receiving unit 5 for forming photoelectric conversion inside a semiconductor substrate, and forming a charge transfer unit 3 for transferring signal charges read from the light receiving unit. In the method, annealing is performed after an ion implantation step of forming an embedded channel area comprising the charge transfer unit. COPYRIGHT: (C)2006,JPO&NCIPI
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