| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power semiconductor device wherein its long-term reliability can be maintained even under a high-temperature environment. <P>SOLUTION: In the power semiconductor device, there is used a composite material made of carbon and aluminum or a composite material made of carbon and copper, as a conductive strip 201 whereby the electrode of a semiconductor element 101 and a conductor layer 102a of a ceramics insulation substrate 103 serving as a wiring substrate are connected. Consequently, there is kept small in a suppressive way the difference between the thermal expansion coefficients of the conductive strip 201 and the ceramics insulation substrate 103. Further, in order to join the strip 201 to the electrode and to the conductor layer 102a, there are so used joining layers 202a, 202b made of a mixture whose main component comprises gold and silver grains having the fine grain sizes of 5 nm to several 10 μm, so to speak, having nano and micron sizes as to obtain the securing of heat radiating qualities and the relaxation of thermal stresses which are generated in their connective portions. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
