| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where dispersion of a resistance value in a resistor is suppressed and destruction of a gate insulating film of an MIS transistor is prevented and to provide a manufacturing method of the device. SOLUTION: In the semiconductor device, heat treatment and silicide formation for impurity activation are performed in a state where an upper part of a resistor 5e is covered with a silicon oxide film 22 and gate electrodes 5c and 5d and impurity diffusion layers 19 and 21 of MIS transistors 33 and 34, which are non-silicide regions, are exposed. Since auto-dope of impurity is suppressed, dispersion of the resistance value of the resistor is suppressed. Since gate electrodes 5b and 5c of the MIS transistors 33 and 34 are exposed, gate insulating films 4c and 4d of the MIS transistors 33 and 34 are difficult to be destroyed at the time of heat treatment for activating impurity. COPYRIGHT: (C)2006,JPO&NCIPI
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