SLURRY COMPOSITION AND METHOD FOR CHEMICAL MECHANICAL POLISHING OF COPPER INTEGRATED WITH TUNGSTEN-BASED BARRIER METAL

摘要

PROBLEM TO BE SOLVED: To provide a slurry composition for making the polishing of copper structures integrated with tungsten-containing barriers possible while dissolving shortcomings of commercially available polishing slurry and preventing galvanic corrosion.

SOLUTION: The slurry composition is for polishing copper integrated with tungsten-containing barrier layers and related to its use in a CMP method. The slurry composition is also related to a method for polishing copper integrated with tungsten-containing barrier layers. The method is carried out using slurry (an aqueous solution) containing abrasive particles, an inorganic acid such as HNO3as an etchant for copper that prevents the galvanic corrosion of a tungsten-containing barrier metal and at least one organic compound to provide sufficient copper corrosion inhibition.

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