| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve emission efficiency by discharging light generated in a well layer without being absorbed in a p-type contact layer in a light emitting element using a group III nitride semiconductor on a substrate. <P>SOLUTION: An n-type contact layer 13 is formed of GaN. The well layer 14a of a light emitting layer 14 is formed of In<SB>0.25</SB>Ga<SB>0.75</SB>N with band gap energy W12=2.77 eV. A barrier layer 14b of the light emitting layer 14 is formed of GaN with band gap energy W13=3.42 eV. The p-type contact layer 15 is formed of In<SB>0.12</SB>Ga<SB>0.88</SB>N with the band gap energy W11=3.10 eV. Thus, activation energy of impurity is made small, conductivity and contact resistance of the p-type contact layer 15 are improved and a characteristic of the light emitting element 10 can be improved with W11<W13. W11 is not made to be small too much but W11>W12 are set. Light generated in the well layer 14a is not absorbed in the p-type contact layer 15 but is discharged. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
