| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device capable of effectively preventing the short-circuiting between contacts and coping with fining, and to provide a manufacturing method of the same. SOLUTION: The system comprises a gate electrode process of forming a plurality of laminated gate electrodes through the insulating film on a semiconductor substrate, a side wall forming process of forming side walls on the sides in extending directions of the laminated gate electrodes, an insulating layer forming process of forming the insulating layer covering the laminated gate electrodes and sidewalls on the semiconductor substrates, a contact groove forming process of forming line-like contact grooves by selectively etching the insulating layers between a plurality of the laminated gate electrodes, a contact plug forming process of forming line-like contact plugs by embedding conductive materials for the contact grooves, and a contact forming process of forming contacts mutually electrically isolated by disconnecting the contact plugs in the longitudinal directions. COPYRIGHT: (C)2006,JPO&NCIPI
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