| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability by eliminating disconnection of wiring caused by large stepping of a semiconductor element due to a metamorphic buffer layer in a semiconductor device with a non-grating matching semiconductor element. SOLUTION: The metamorphic buffer layer 20 on a base body 1 has its extension area 20R formed outside a formation part for a semiconductor element across an inter-element separation groove 41 to reduce a substantial step between the semiconductor element and another part adjacent thereto, thereby improving reliability of an insulating layer, a wire, etc., against the stepping. COPYRIGHT: (C)2006,JPO&NCIPI
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