| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method for flattening the front surface of the desired region of an etched layer. SOLUTION: The etching method is applied to the etched layer 20 etched in a base material 10 wherein field forming paired electrodes 13A, 13B are formed, a layer to be etched 20 is also formed between the field forming paired electrodes 13A, 13B, and a resist layer 21 providing an aperture 22 to the part to be etched is formed on the front surface of the layer 20 to be etched. The layer 20 to be etched is etched using an etching seed under in a state that a velocity element parallel to the surface of the base material 10 is given to the etching seed by generating an electric field (E) almost parallel to the surface of the base material 10 to an area near the surface of the layer 20 to be etched by the application of different voltages to the field forming paired electrodes 13A, 13B. COPYRIGHT: (C)2006,JPO&NCIPI
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