| 摘要 |
PROBLEM TO BE SOLVED: To provide a power MOSFET device having improved characteristics such as low output capacitance, high breakdown voltage, and improved heat performance. SOLUTION: In one embodiment, MOSFET contains at least two trench regions filled up with an insulator which are formed in a first semiconductor region apart from each other in the lateral direction so as to form a drift region; and at least one resistive element arranged along the periphery of each trench region filled up with an insulator. The ratio of the width of trench regions filled up with an insulator to the width of the drift region is so adjusted as to minimize the output capacitance of the MOSFET. COPYRIGHT: (C)2006,JPO&NCIPI
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