| 摘要 |
PROBLEM TO BE SOLVED: To provide an avalanche photodiode which can improve a low noise property and a high speed response property and which can raise sensitivity. SOLUTION: The avalanche photodiode includes a semiconductor multiplication layer between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer and includes a semiconductor optical absorption layer between the semiconductor amplifying layer and the second conductivity type semiconductor layer. An amplification suppressing layer for suppressing the amplification of the semiconductor optical absorption layer is further formed in thickness of 0.6μm or less between the semiconductor optical absorption layer and the second conductivity type semiconductor layer, and the thickness of the semiconductor optical absorption layer is set to 0.5μm or more. COPYRIGHT: (C)2006,JPO&NCIPI
|
