| 摘要 |
PROBLEM TO BE SOLVED: To provide a consistent reaction chamber environment capable of realizing a uniform PECVD (plasma enforced chemical vapor deposition) deposition rate while a series of substrates are successively treated in a process chamber. SOLUTION: A method is provided, which improves the uniformity of the deposition rate of the chemical vapor deposition (CVD) of a film when a large number of substrates are continuously and successively processed in a deposition chamber. This method includes a step of performing the plasma pre-heating of at least one processing volume structure in a processing volume surrounding the substrate when the substrate is present in the deposition chamber. A device control method is also provided, which regulates the deposition time of several substrates in the beginning of the continuous and successive processing of a large number of substrates in the deposition chamber, and the deposited film thickness is kept substantially constant during the processing of a series of substrates. By combining these methods into a single method, the best result can be obtained in controlling a mean film thickness from substrate to substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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