| 摘要 |
A technique capable of forming an NiSi film having excellent characteristics, which TiSi<SUB>2 </SUB>or CoSi<SUB>2 </SUB>produced thus far is not able to assume, without damaging a substrate is provided. A film forming material for forming a nickel silicide film or a Nickel film is provided, wherein an Ni source of said film is Ni(PF<SUB>3</SUB>)<SUB>4</SUB>.
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