<p>A method of manufacturing a semiconductor device includes forming an insulation pattern over a substrate. The insulation pattern has at least one opening that exposes a surface of the substrate. Then, a first polysilicon layer is formed over the substrates such that the first polysilicon layer fills the opening. The first polysilicon layer also includes a void therein. An upper portion of the first polysilicon layer is removed such that void expands to a recess and the recess is exposed. A second polysilicon layer is formed over the substrate such that the second polysilicon layer fills the recess.</p>
申请公布号
KR100552588(B1)
申请公布日期
2006.02.09
申请号
KR20040085629
申请日期
2004.10.26
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
YEO, IN JOON;LEE, WON JUN;KIM, TAE HYUN;KIM, JI HONG;YOON, BYOUNG MOON