| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a conductive sapphire substrate at lower heating temperature. SOLUTION: The manufacturing method for the sapphire substrate includes the stages of forming a thin film 2 of single crystal nickel oxide on a 1st single-crystal sapphire substrate 1, filming the thin film 2 with a 2nd single-crystal sapphire substrate 3, and reducing the thin film 2 into a conductive thin film 5 of metal nickel. A method whose process temperature is lower like vapor-phase deposition can be employed by using the method of forming the thin film 2 of nickel oxide and the 2nd sapphire substrate 3 in order. COPYRIGHT: (C)2006,JPO&NCIPI
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