| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of reducing defects of wiring within a recess by reducing impurities taken in a plating film. SOLUTION: A wafer W comprising a wiring groove 1b and a via hole 1a on its surface is submerged in a plating liquid, and a voltage is applied between the wafer W and an anode 11 to form a plating film 4 on the wafer W. After the plating film 4 is formed, the wafer W is taken out of the plating liquid while the voltage is applied. A seed film 3 and the plating film 4 are subjected to a thermal process to grow crystal, forming a wiring film 5. Lastly, such wiring film 5 as not buried in the via hole 1a and the wiring groove 1b is removed to form a wiring 5a. COPYRIGHT: (C)2006,JPO&NCIPI
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