| 摘要 |
A radio frequency switch with reduced noise on the receiving side and optimizes linearity on the transmitting side by using an asymmetric metal-oxide semiconductor (MOS) transistor structure is disclosed. In one embodiment, low voltage threshold MOS structures are used on the receiving side and high voltage threshold MOS structures are used on the transmitting side. Dynamic threshold MOS transistors may be used on the receiving side. The MOS transistors on the transmitting side may be arranged in serially connected pairs. Adjustment signals may be used to create an apparent low threshold or an apparent high threshold. |
