FABRICATION METHOD OF MOS TRANSISTOR,申请号KR20040061136-传众专利搜索

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发明名称	FABRICATION METHOD OF MOS TRANSISTOR
摘要
申请公布号	KR20060012442(A)	申请公布日期	2006.02.08
申请号	KR20040061136	申请日期	2004.08.03
申请人	DONGBUANAM SEMICONDUCTOR INC.	发明人	KIM, DUCK HWAN
分类号	H01L21/336;H01L21/31	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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