Semiconductor device having vertically stacked field effect transistors and methods of manufacturing the same

摘要

A semiconductor device and method of manufacturing the same are disclosed. The semiconductor device includes a plurality of inverters including at least one first pull-up transistor and first pull-down transistor, respectively; and a plurality of NAND gates including at least two second pull-up transistor and second pull-down transistor, respectively, wherein the at least one first pull-up transistor and first pull-down transistor and the at least two second pull-up transistor and second pull-down transistor are stacked and arranged vertically on at least two layers on the semiconductor substrate.
The invention is embodied in an inverter circuit of an SRAM, NAND and NOR gates of a peripheral circuit of a semiconductor memery.