| 发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE |
| 摘要 |
A semiconductor device of the present invention includes a semiconductor layer that has an off-angle inclined in a predetermined off-direction and that is made of a first conductivity type wide bandgap semiconductor at a surface of which a trench is formed, a first electrode bonded to a surface of the semiconductor layer, and a second electrode bonded to a back surface of the semiconductor layer, and when a side surface of the trench is decomposed into a parallel component and a perpendicular component with respect to the off-direction of the semiconductor layer, the parallel component is larger than the perpendicular component. |
| 申请公布号 |
US2016254357(A1) |
申请公布日期 |
2016.09.01 |
| 申请号 |
US201415031176 |
申请日期 |
2014.10.24 |
| 申请人 |
ROHM CO., LTD. |
发明人 |
AKETA Masatoshi |
| 分类号 |
H01L29/16;H01L29/06;H01L29/872;H01L29/08;H01L29/10;H01L29/47;H01L29/78;H01L23/00;H01L23/31;H01L29/167;H01L29/36;H01L29/45;H01L29/04;H01L29/423 |
主分类号 |
H01L29/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor layer that has an off-angle inclined in a predetermined off-direction and that is made of a first conductivity type wide bandgap semiconductor at a surface of which a trench is formed; a first electrode bonded to a surface of the semiconductor layer; and a second electrode bonded to a back surface of the semiconductor layer, wherein, when a side surface of the trench is decomposed into a parallel component and a perpendicular component with respect to the off-direction of the semiconductor layer, the parallel component is larger than the perpendicular component. |
| 地址 |
Kyoto-shi, Kyoto JP |
