发明名称 |
Nitride semiconductor light-emitting device |
摘要 |
A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer. |
申请公布号 |
EP1624544(A2) |
申请公布日期 |
2006.02.08 |
申请号 |
EP20050251690 |
申请日期 |
2005.03.18 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
Hasegawa, Yoshiaki;Yokogawa, Toshiya;Ishibashi, Akihiko |
分类号 |
H01S5/323;H01S5/343;H01L29/22;H01S5/042;H01S5/20;H01S5/22 |
主分类号 |
H01S5/323 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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