| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor having a high mobility in which aging of the threshold value is improved, its fabricating method, and an active matrix display comprising the thin film transistor. SOLUTION: The thin film transistor comprises an insulating film 12 formed on a substrate 10, semiconductor layers 16a and 16b formed on an insulating film 14, a gate electrode 18, a source electrode 20 connected with the semiconductor layers, and a drain electrode 22 wherein the semiconductor layers 16a and 16b are formed such that electronic affinity decreases as they approach the insulating film 14 along the thickness direction thereof. COPYRIGHT: (C)2004,JPO |
