Phase shift mask, method for forming pattern using phase shift mask and manufacturing method for electronic device

摘要

A phase shift mask of the present invention has a half tone light blocking film formed on a substrate and having an aperture for exposing a portion of the surface of substrate. The phase of the exposure light that has been transmitted through half tone light blocking film differs from the phase of the exposure light that has been transmitted through aperture by 180�. The light transmission rate defined by the ratio of the light intensity of the exposure light that has been transmitted through half tone light blocking film to the light intensity of the exposure light that has been transmitted through aperture is not less than 15% to not more than 25%. The dimension of aperture is not less than 0.26 to not more than 0.45 according to the measurement wherein wavelength lambda of the exposure light/numerical aperture NA is set at 1.